TY  - CHAP
AU  - Cremades Rodríguez, Ana Isabel
AU  - Albrecht, M.
AU  - Ulloa, J.M.
AU  - Piqueras De Noriega, Francisco Javier
AU  - Strunk, H.P.
AU  - Hanser, D.
AU  - Davis, R. F.
PY  - 2000
SN  - 0272-9172
SN  - 0272-9172
UR  - https://hdl.handle.net/20.500.14352/60797
T2  - Optical Microestructuras Characterization of Semiconductors
AB  - A series of 100 nm thick InGaN films with In content up to 14% has been grown by MOVPE on SiC substrates. Optical characterization was carried out by means of reflectance spectrometry, photoluminescence and cathodoluminescence. Optical properties of...
M2  - 81
PB  - Materials Research Society
KW  - Materials Science
KW  - Characterization & Testing
KW  - Optics
TI  - Optical properties and defect structure of MOVPE InGaN films
TY  - book part
ER  -