RT Journal Article
T1 Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires
A1 Nogales Díaz, Emilio
A1 Sánchez, B.
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
AB Isoelectronic (In, Al) doped gallium oxide nanowires have been grown by a vapour solidification process. XRD and TEM were used for their structural characterization. The morphology and optical properties of the In(Al)-doped Ga_2O_3 nanowires have been investigated by means of the secondary electrons and cathodoluminescence (CL) techniques in the SEM. Red and blue-UV emission bands appear as complex bands and their components are influenced by the presence of In or Al, leading to a blue-shift of the blue-UV band usually observed in undoped gallium oxide. These In and Al related changes in the luminescence features of doped Ga_2O_3 nanostructures are discussed.
PB Academic Press Ltd- Elsevier Science Ltd
SN 0749-6036
YR 2009
FD 2009-04
LK https://hdl.handle.net/20.500.14352/44098
UL https://hdl.handle.net/20.500.14352/44098
LA eng
NO © 2008 Elsevier Ltd..This work was supported by MEC (Project MAT 2006-01259)International Workshop on Beam Injection Assessment of Microstructure in Semiconductors (9. 2008-2009. Toledo).
NO MEC
DS Docta Complutense
RD 9 abr 2025