RT Journal Article
T1 Compositional analysis of amorphous SiNx : H films by ERDA and infrared spectroscopy
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Prado Millán, Álvaro Del
AB The composition of amorphous SiNx:H films grown by the electron cyclotron resonance (ECR) plasma method was studied by heavy-ion elastic recoil detection analysis (ERDA) with Xe-129 ion beams of 1.1 and 1.8 MeV amu(-1) and time-of-light (ToF) mass separation. This technique allows simultaneous determination of the absolute atomic concentrations and depth profiles of all involved elements, including hydrogen, Radiation damage at extended ion beam exposure was found to decrease the N/Si ratio and the hydrogen concentration, By measuring the dose dependence, this effect was quantified in order to support correction to zero dose conditions. Monitoring the damage effects by infrared (IR) spectroscopy revealed an increase of the SI-H bond density at the expense of N-H bands. The results suggest that the damage process Is initiated by breaking of N-H bonds and that recapturing of hydrogen by Si appears as an effective competitive process to hydrogen release, Combining the ERDA and IR data, the oscillator strength ratio of the N-H and Si-H stretching bands is found to be 1.4 +/- 0.2, Copyright (C) 2000 John Wiley & Sons, Ltd.
PB John Wiley & Sons Ltd
SN 0142-2421
YR 2000
FD 2000-08
LK https://hdl.handle.net/20.500.14352/59231
UL https://hdl.handle.net/20.500.14352/59231
NO European Conference on Applications of Surface and Interface Analysis (8. 1999. Sevilla, España). © John Wiley & Sons, Ltd.
DS Docta Complutense
RD 31 ago 2024