TY  - JOUR
AU  - González Díaz, Germán
AU  - Blanco, N.
AU  - Artús, L.
AU  - Cuscó, R.
AU  - Ibáñez, J.
PY  - 1999
DO  - 10.1103/PhysRevB.60.5456
SN  - 0163-1829
UR  - https://hdl.handle.net/20.500.14352/59344
T2  - Physical Review B
AB  - We have studied LO phonon-plasmon coupled modes by means of Raman scattering in n-InP for carrier densities between 6x10(16) and 1x10(19) cm(-3). A line-shape theory based on the Lindhard-Mermin dielectric function that takes into account the...
LA  - eng
M2  - 5456
PB  - American Physical Society
KW  - P-Type GaAs
KW  - Carrier Concentration
KW  - Conduction-Band
KW  - Gallium Nitride
KW  - Spectra
KW  - Photoluminescence
KW  - Nonparabolicity
KW  - Crystals
KW  - GaP.
TI  - Raman scattering by LO phonon-plasmon coupled modes in n-type InP
TY  - journal article
VL  - 60
ER  -