TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 1999
DO  - 10.1063/1.371774
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59252
T2  - Journal of Applied Physics
AB  - We report a study of metal-insulator-semiconductor (MIS) structures on InP. The interfacial state density and deep levels existing in MIS structures were measured by deep level transient spectroscopy (DLTS) technique. The electrical insulator...
LA  - eng
M2  - 6924
PB  - American Institute of Physics
KW  - Chemical-Vapor-Deposition
KW  - Hydrogen Passivation
KW  - Deep Levels
KW  - InP
KW  - Films
KW  - Stability
KW  - Traps
KW  - GaAs
KW  - Si
KW  - Spectroscopy.
TI  - Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx : H/InP metal-insulator-semiconductor structures fabrication
TY  - journal article
VL  - 86
ER  -