TY  - JOUR
AU  - Nogales Díaz, Emilio
AU  - Martin, R. V.
AU  - O'Donnell, K. P.
AU  - Lorenz, K.
AU  - Alves, E.
AU  - Ruffenach, S.
AU  - Briot, O.
PY  - 2006
DO  - 10.1063/1.2162797
SN  - 0003-6951
UR  - https://hdl.handle.net/20.500.14352/52125
T2  - Applied physics letters
AB  - The structural properties of nanometric AlN caps, grown on GaN to prevent dissociation during high temperature annealing after Eu implantation, have been characterized by scanning electron microscopy and electron probe microanalysis. The caps provide...
LA  - eng
PB  - American Institute of Physics
KW  - Activation
KW  - Si
KW  - Luminescence
KW  - Emitters
TI  - Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing
TY  - journal article
VL  - 8
ER  -