RT Journal Article
T1 Native Oxide Layer Role during Cryogenic-Temperature Ion Implantations in Germanium
A1 Caudevilla Gutiérrez, Daniel
A1 Pérez Zenteno, Francisco José
A1 Duarte Cano, Sebastián
A1 Algaidy, Sari
A1 Benítez Fernández, Rafael
A1 Godoy Pérez, Guillermo
A1 Olea Ariza, Javier
A1 San Andrés Serrano, Enrique
A1 García Hernansanz, Rodrigo
A1 Prado Millán, Álvaro Del
A1 Martil De La Plaza, Ignacio
A1 Pastor Pastor, David
A1 García Hemme, Eric
AB Herein, the structural properties and chemical composition of Ge samples implanted with tellurium at cryogenic temperatures are analyzed, focusing on the role of the native oxide. For germanium, cryogenic-temperature implantation is a requirement to achieve hyperdoped impurity concentrations while simultaneously preventing surface porosity. In this work, the critical role of the thin native germanium oxide is demonstrated when performing ion implantations at temperatures close to the liquid nitrogen temperature. The structural and chemical composition of tellurium-implanted samples as a function of the implanted dose from 5 × 1014 to 5 × 1015 cm−2 is analyzed. After a laser melting process, the incorporated oxygen is diffused to the surface forming again a GeOx layer which retains a large fraction of the total implanted dose. These detrimental effects can be eliminated by a selective etching of the native oxide layer prior to the ion implantation process. These effects have been also observed when implanting on Si substrates. This work identifies key aspects for conducting implantations at cryogenic temperatures, that are otherwise negligible for ion implanting at room temperature.
PB Wiley
YR 2024
FD 2024-07-08
LK https://hdl.handle.net/20.500.14352/110956
UL https://hdl.handle.net/20.500.14352/110956
LA eng
NO Caudevilla, D., Pérez‐Zenteno, F. J., Duarte‐Cano, S., Algaidy, S., Benítez‐Fernández, R., Godoy‐Pérez, G., Olea, J., San Andrés, E., García‐Hernansanz, R., Del Prado, Á., Mártil, I., Pastor, D., & García‐Hemme, E. (2024). Native oxide layer role during cryogenic‐temperature ion implantations in germanium. Physica Status Solidi (a), 2400124. https://doi.org/10.1002/pssa.202400124
NO Agencia Española de Investigación
NO Ministerio de Ciencia, Innovación y Universidades (España)
NO Consejo Nacional de Humanidades, Ciencias y Tecnologías (México)
NO Universidad Complutense de Madrid
NO Ministry of Education (Saudi Arabia)
NO Ministerio de Trabajo y Economía Social. (España)
DS Docta Complutense
RD 9 abr 2025