RT Journal Article
T1 Large magnetoresistance of isolated domain walls in La_(0.7)Sr(0.3)MnO_3 nanowires
A1 Orfila Rodríguez, Gloria
A1 Sanchez-Manzano, David
A1 Arora, Ashima
A1 Cuéllar Jiménez, Fabian Andrés
A1 Ruiz Gómez, Sandra
A1 Rodriguez-Corvillo, Sara
A1 López, Sandra
A1 Peralta, Andrea
A1 Carreira, Santiago J.
A1 Gallego, Fernando
A1 Tornos Castillo, Javier
A1 Rouco Gómez, Víctor
A1 Riquelme, Juan J.
A1 Munuera, Carmen
A1 Mompean, Federico J.
A1 Garcia-Hernandez, Mar
A1 Sefrioui Khamali, Zouhair
A1 Villegas Hernández, Javier Eulogio
A1 Pérez García, Lucas
A1 Rivera Calzada, Alberto Carlos
A1 León Yebra, Carlos
A1 Valencia, Sergio
A1 Santamaría Sánchez-Barriga, Jacobo
AB Generation, manipulation, and sensing of magnetic domain walls are cornerstones in the design of efficient spintronic devices. Half-metals are amenable for this purpose as large low field magnetoresistance signals can be expected from spin accumulation at spin textures. Among half metals, La1−xSrxMnO3 (LSMO) manganites are considered as promising candidates for their robust half-metallic ground state, Curie temperature above room temperature (Tc = 360 K, for x = 1/3), and chemical stability. Yet domain wall magnetoresistance is poorly understood, with large discrepancies in the reported values and conflicting interpretation of experimental data due to the entanglement of various source of magnetoresistance, namely, spin accumulation, anisotropic magnetoresistance, and colossal magnetoresistance. In this work, the domain wall magnetoresistance is measured in LSMO cross-shape nanowires with single-domain walls nucleated across the current path. Magnetoresistance values above 10% are found to be originating at the spin accumulation caused by the mistracking effect of the spin texture of the domain wall by the conduction electrons. Fundamentally, this result shows the importance on non-adiabatic processes at spin textures despite the strong Hund coupling to the localized t2g electrons of the manganite. These large magnetoresistance values are high enough for encoding and reading magnetic bits in future oxide spintronic sensors.
PB Wiley
SN 0935-9648
YR 2023
FD 2023-04-12
LK https://hdl.handle.net/20.500.14352/98854
UL https://hdl.handle.net/20.500.14352/98854
LA eng
NO G. Orfila, D. Sanchez-Manzano, A. Arora, F. Cuellar, S. Ruiz-Gómez, S. Rodriguez-Corvillo, S. López, A. Peralta, S. J. Carreira, F. Gallego, J. Tornos, V. Rouco, J. J. Riquelme, C. Munuera, F. J. Mompean, M. Garcia-Hernandez, Z. Sefrioui, J. E. Villegas, L. Perez, A. Rivera-Calzada, C. Leon, S. Valencia, J. Santamaria, Large Magnetoresistance of Isolated Domain Walls in La2/3Sr1/3MnO3 Nanowires. Adv. Mater. 2023, 35, 2211176. https://doi.org/10.1002/adma.202211176
NO Unión Europea Horizonte 2020
NO Comunidad Autónoma de Madrid
NO Gobierno de España
DS Docta Complutense
RD 20 jul 2024