RT Journal Article
T1 Origin of yellow luminescence from reduced pressure grown bulk GaN crystals
A1 Herrera Zaldiva, M.
A1 Fernández Sánchez, Paloma
A1 Piqueras De Noriega, Francisco Javier
A1 Sukhoveyev, W.
A1 Ivantsov, V. A.
A1 Shreter, Y. G.
AB Cathodoluminescence (CL) in the scanning electron microscope has been applied to study the luminescence emission of GaN single crystals grown by LPE methods. CL spectra show the presence of near band edge and of yellow emissions. The latter has been found to be mainly related to rows of hillocks formed at the growth steps. The origin of the yellow luminescence is discussed PACS: 78.60Hk; 71.55Eq.
PB Springer
SN 0947-8396
YR 2000
FD 2000-07
LK https://hdl.handle.net/20.500.14352/59134
UL https://hdl.handle.net/20.500.14352/59134
LA eng
NO © Springer-Verlag 2000.This work has been supported by DGES (Project PB96-0639). The Russian Fund for Basic Research (Project 98-01-01084) is acknowledged.
NO DGES
NO The Russian Fund for Basic Research
DS Docta Complutense
RD 11 abr 2025