RT Journal Article
T1 Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry
A1 Martil De La Plaza, Ignacio
AB We developed and tested three MBE-compatible processes for the deposition of high-quality low-temperature silicon oxides and oxynitrides in the ultra high vacuum at substrate temperatures between room temperature and 500 degrees C, gas enhanced evaporation (GEE), plasma enhanced evaporation (PEE) and plasma enhanced oxidation (PEO). The deposited layers were thoroughly investigated and compared with respect to their electrical, optical and stoichiometrical properties by means of ellipsometry, mechanical profilometry, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), Rutherford backscattering (RBS), Fourier transform infrared ((FTIR) spectroscopy, and by electrical measurements (I-V, C-V) on MOS structures. A model of the growth mechanism for each of the processes is suggested.
PB Elsevier Science SA
SN 0040-6090
YR 1999
FD 1999-07-30
LK https://hdl.handle.net/20.500.14352/59264
UL https://hdl.handle.net/20.500.14352/59264
LA eng
NO © Elsevier Science Ireland Ltd. The authors like to thank J. Messarosch, G. Fehlauer, H. Baumgärtner, F. Kaesen, H. Geiger, V.R. Rao and T. Pompl for their assistance in electrical measurements, sample preparation and fruitful discussions. The expertise of J. Ramm, E. Beck and R. Slepicka of Balzers AG is greatfully acknowledged. This work was supported by the BMBF under grant no. BA-672. One of the authors, A. Strass, likes to thank the German Academic Exchange Service (DAAD) for financial assistance during his scientific stay at the Universidad de Chile.
NO German BMBF
DS Docta Complutense
RD 7 abr 2025