TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Olea Ariza, Javier
PY  - 2011
DO  - 10.1063/1.3561374
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/44238
T2  - Journal of Applied Physics
AB  - Si samples have been implanted with very high Ti doses (over the theoretical Mott limit) to obtain an intermediate band (IB) in the host semiconductor. The electronic transport properties of this material have been analyzed by temperature-dependent...
LA  - eng
PB  - American Institute of Physics
KW  - Impurity Band
KW  - Efficiency
KW  - Mobility
KW  - Carriers
KW  - Cell.
TI  - Two-layer Hall effect model for intermediate band Ti-implanted silicon
TY  - journal article
VL  - 109
ER  -