RT Journal Article
T1 Influence of deformation on the luminescence of GaN epitaxial films
A1 Zaldivar, M.H.
A1 Fernández Sánchez, Paloma
A1 Piqueras De Noriega, Francisco Javier
AB The effect of indentation on the cathodoluminescence (CL) of GaN:Si epitaxial films has been investigated in the scanning electron microscope. Deformation produces changes in the defect structure which are monitored through the changes induced in the cathodoluminescent emission. Besides a general quenching of the luminescence, an increase of the relative intensity of the deep level bands is observed. The effect of different annealing treatments on the CL emission has been investigated.
PB Iop Publishing Ltd
SN 0268-1242
YR 1998
FD 1998-08
LK https://hdl.handle.net/20.500.14352/59140
UL https://hdl.handle.net/20.500.14352/59140
LA eng
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NO © 1998 IOP Publishing Ltd.This work was supported by DGICYT (project PB96-0639). MHZ thanks AECI and CoNaCyT for a research grant. The help of Dr J M G´omez de Salazar on mechanical treatments is also acknowledged.
NO DGICYT
NO AECI
NO CoNaCyT
DS Docta Complutense
RD 28 sept 2024