TY  - JOUR
AU  - Zaldivar, M.H.
AU  - Fernández Sánchez, Paloma
AU  - Piqueras De Noriega, Francisco Javier
PY  - 1998
DO  - 10.1088/0268-1242/13/8/013
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/59140
T2  - Semiconductor Science and Technology
AB  - The effect of indentation on the cathodoluminescence (CL) of GaN:Si epitaxial films has been investigated in the scanning electron microscope. Deformation produces changes in the defect structure which are monitored through the changes induced in the...
LA  - eng
M2  - 900
PB  - Iop Publishing Ltd
KW  - Light-Emitting-Diodes
KW  - Cathodoluminescence
TI  - Influence of deformation on the luminescence of GaN epitaxial films
TY  - journal article
VL  - 13
ER  -