TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro Del
AU  - San Andrés Serrano, Enrique
PY  - 2003
DO  - 10.1063/1.1586979
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/51130
T2  - Journal of Applied Physics
AB  - The effect of rapid thermal annealing (RTA) processes on the structural properties of SiOxNyHz films was investigated. The samples were deposited by the electron cyclotron resonance plasma method, using SiH4, O-2 and N-2 as precursor gases. For...
LA  - eng
M2  - 1019
PB  - American Institute of Physics
KW  - Chemical-Vapor-Deposition
KW  - Electron-Cyclotron-Resonance
KW  - Silicon-Oxynitride Films
KW  - Thin-Films
KW  - Optical-Properties
KW  - Structural-Properties
KW  - Refractive-Indez
KW  - Enhanced Growth
KW  - Dioxide Films
KW  - Oxide Films.
TI  - Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films
TY  - journal article
VL  - 94
ER  -