RT Journal Article
T1 Long time asymptotics for the semiconductor  Vlasov-Poisson-Boltzmann equations
A1 Carpio Rodríguez, Ana María
A1 Cebrián, Elena
A1 Mustieles, F. J.
AB In this paper we analyze the long time behavior of solutions to the one-dimensional Vlasov–Poisson–Boltzmann (VPB) equations for semiconductors in unbounded domains when only one type of carriers (electrons) are considered. We prove that the distribution of electrons tends for large times to a steady state of the VPB equations with vanishing collision term and the same total charge as the initial data. In the proof of the main result, the conservation law of charge, the balance of energy and entropy inequalities are rigorously derived. An important argument in the proof is to use a Lyapunov-type functional related to these physical quantities.
PB World Scientific Publishing
SN 0218-2025
YR 2001
FD 2001
LK https://hdl.handle.net/20.500.14352/94460
UL https://hdl.handle.net/20.500.14352/94460
LA eng
NO Carpio, A., et al. «LONG TIME ASYMPTOTICS FOR THE SEMICONDUCTOR VLASOV–POISSON–BOLTZMANN EQUATIONS». Mathematical Models and Methods in Applied Sciences, vol. 11, n.o 09, diciembre de 2001, pp. 1631-55. https://doi.org/10.1142/S0218202501001513.
DS Docta Complutense
RD 8 abr 2025