TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - Prado Millán, Álvaro Del
AU  - San Andrés Serrano, Enrique
PY  - 2000
DO  - 10.1063/1.371996
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59250
T2  - Journal of Applied Physics
AB  - The effect of rapid thermal annealing processes on the properties of SiO2.0 and SiN1.55 films was studied. The films were deposited at room temperature from N-2 and SiH4 gas mixtures, and N-2, O-2, and SiH4 gas mixtures, respectively, using the...
LA  - eng
M2  - 1187
PB  - American Institute of Physics
KW  - Chemical-Vapor-Deposition
KW  - Silicon Dioxide Films
KW  - Insulator-Semiconductor Devices
KW  - Paramagnetic Point-Defects
KW  - Low-Temperature Deposition
KW  - Nitride Thin-Films
KW  - Microwave Plasmas
KW  - Room-Temperature
KW  - Oxynitride Films
KW  - Oxide Films.
TI  - Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx : H films deposited by electron cyclotron resonance
TY  - journal article
VL  - 87
ER  -