RT Book, Section
T1 Laser induced single events in SRAMs
A1 Palomar Trives, Carlos
A1 López Calle, Isabel
A1 Franco Peláez, Francisco Javier
A1 Agapito Serrano, Juan Andrés
A1 González Izquierdo, Jesús
AB This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.
PB IEEE-Inst Electrical Electronics Engineers Inc
SN 978-1-4673-4666-5
YR 2013
FD 2013-02
LK https://hdl.handle.net/20.500.14352/35721
UL https://hdl.handle.net/20.500.14352/35721
LA eng
NO ©IEEE.E-ISBN : 978-1-4673-4667-2.Spanish Conference on Electron Devices (CDE)(9. 2013. Valladolid, España)
NO Ministerio de Educación y Ciencia
DS Docta Complutense
RD 17 abr 2025