TY  - CHAP
AU  - Palomar Trives, Carlos
AU  - López Calle, Isabel
AU  - Franco Peláez, Francisco Javier
AU  - Agapito Serrano, Juan Andrés
AU  - González Izquierdo, Jesús
PY  - 2013
DO  - 10.1109/CDE.2013.6481390
SN  - 978-1-4673-4666-5
UR  - https://hdl.handle.net/20.500.14352/35721
AB  - This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.
LA  - eng
M2  - 253
PB  - IEEE-Inst Electrical Electronics Engineers Inc
KW  - SRAM chips
KW  - Laser beam effects
KW  - Radiation hardening (electronics)
KW  - SRAM
KW  - error emulation
KW  - Laser induced single events
KW  - Pulsed laser
KW  - Semiconductor memory
KW  - Sensitivity map
KW  - Space radiation
KW  - Microprocessors
KW  - Performance evaluation
KW  - Polymers
KW  - Radiation effects
KW  - Semiconductor lasers
KW  - Sensitivity
KW  - Laser
KW  - MCU
KW  - SEU
KW  - Errors
KW  - Memory
TI  - Laser induced single events in SRAMs
TY  - book part
ER  -