TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 1999
DO  - 10.1088/0268-1242/14/7/307
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/59279
T2  - Semiconductor Science and Technology
AB  - Ex situ deposited SiNx:H/In0.53Ga0.47As metal-insulator-semiconductor devices, with a minimum of interface state density of 3.5 x 10(11) eV(-1) cm(-2) have been obtained by electron cyclotron resonance plasma method at a low substrate temperature (200...
LA  - eng
M2  - 628
PB  - Iop Publishing Ltd
KW  - Insulator-Semiconductor Structures
KW  - Electron-Cyclotron-Resonance
KW  - Layers.
TI  - Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
TY  - journal article
VL  - 14
ER  -