RT Journal Article
T1 Magnetotunneling between two-dimensional electron gases in InAs-AlSb-GaSb heterostructures
A1 Lin, Y.
A1 González Herrera, Elvira María
A1 Méndez, E. E.
A1 Magno, R.
A1 Bennett, B. R.
A1 Bracker, A.S.
AB We have observed that the tunneling magnetoconductance between two-dimensional (2D) electron gases, formed at nominally identical InAs-AlSb interfaces, most often exhibits two sets of Shubnikov-de Haas oscillations with almost the same frequency. This result is explained quantitatively with a model of the conductance in which the 2D gases have different densities and can tunnel between Landau levels with different quantum indices. When the epitaxial growth conditions of the interfaces are optimized, the zero-bias magnetoconductance shows a single set of oscillations, thus proving that the asymmetry between the two electron gases can be eliminated.
PB American Physical Society
SN 1098-0121
YR 2003
FD 2003-07-15
LK https://hdl.handle.net/20.500.14352/52087
UL https://hdl.handle.net/20.500.14352/52087
LA eng
NO ©2003 The American Physical Society.We are grateful to W. I. Wang, who provided some of the samples used in this study, and to B. Z. Nosho, L. J. Whitman, and B. V. Shanabrook for their assistance in developing MBE techniques applied to the growth of samples C and D discussed here. This work was supported by the US Army Research Office (Grant No. DAAD- 19-99-1-0270) and the Office of Naval Research.
DS Docta Complutense
RD 7 abr 2025