RT Book, Section
T1 Luminescence from erbium oxide grown on silicon
A1 Nogales Díaz, Emilio
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Plugaru, R
A1 García, J. A.
A1 Tate, T. J.
AB The luminescence properties of erbium oxide grown on crystalline and amorphous silicon substrates were studied by means of photo- and cathodoluminescence techniques. Differences in the luminescence spectra for samples grown on the two type., of substrates used are explained in terms of the different types of erbium centers formed by taking into account the substrate properties and the thermal treatments during growth. For comparison, erbium implanted and oxygen coimplanted crystalline and amorphous silicon have been also investigated by luminescence techniques. In the implanted samples, the sharp transitions from erbium ions in the visible range were quenched and the main emission corresponds to the intraionic transitions in Er3+ ions in the infrared range peaked at 1,54 mum.
PB Materials Research Society
SN 1-55899-628-1
SN 0272-9172
YR 2002
FD 2002
LK https://hdl.handle.net/20.500.14352/60812
UL https://hdl.handle.net/20.500.14352/60812
NO © 2002 Materials Research Society.Conference on Progress in Semiconductor Materials for Optoelectron Applications held at the 2001 MRS Fall Meeting. (2001. Boston).This work was supported by DGI (project MAT2001-2119) and by the Scientific Cooperation Program between Spain and Romania.
NO DGI
NO Scientific Cooperation Program between Spain and Romania
DS Docta Complutense
RD 28 jun 2025