RT Journal Article
T1 Application of scanning electron acoustic microscopy to the characterization of n-type and semiinsulating GaAs
A1 Méndez Martín, Bianchi
A1 Piqueras de Noriega, Javier
AB A series of GaAs wafers with different doping levels and electrical resistivity has been used to investigate the scanning electron acoustic microscopy (SEAM) application to the characterization of this material. It has been found that SEAM is particularly useful to characterize semi-insulating GaAs as compared with n-type material. The SEAM signal generation mechanisms in GaAs are discussed.
PB Amer Inst Physics
SN 0003-6951
YR 1992
FD 1992-03-16
LK https://hdl.handle.net/20.500.14352/58995
UL https://hdl.handle.net/20.500.14352/58995
LA eng
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NO ©2001. All Rights Reserved.This work was supported by the Volkswagen Foundation, by the Comision Interministerial de Ciencia y Tecnologia (Project MAT 90-47) and by DGICYT-DAAD. The authors thank Wacker-Chemitronic (Doctor K. Lohnert ) for providing the samples.
NO Volkswagen Foundation
NO Comision Interministerial de Ciencia y Tecnologia
NO DGICYT-DAAD
DS Docta Complutense
RD 6 may 2024