RT Journal Article
T1 Electrical and compositional properties on Bridgman-grown Gd-doped GaSb substrates
A1 Plaza, J. L.
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Castaño, J. L.
AB In this work pure and Gd-doped GaSb ingots with different dopant concentrations were grown by the Bridgman Method. The compositional and electrical analysis carried out on these materials have shown the dependence of these results on the initial dopant concentration. The analysis have revealed the presence of inclusions which have been identified as Gd-Sb precipitates. The doped material was found to be p-type with a maximum value of the carrier density at the central region of the ingots. It has been also demonstrated that the Gd enhances the A band emission reducing the band-gap emission.
PB Elsevier Science SA
SN 0921-5107
YR 2001
FD 2001-04-24
LK https://hdl.handle.net/20.500.14352/59057
UL https://hdl.handle.net/20.500.14352/59057
LA eng
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NO © 2001 Elsevier Science B.V.Spring Meeting of the European-Materials-Research-Society (2000. Strasbourg, Francia).This work has been supported by CICYT under the project ESP-98-1340.
NO CICYT
DS Docta Complutense
RD 28 sept 2024