TY  - JOUR
AU  - Plaza, J. L.
AU  - Hidalgo Alcalde, Pedro
AU  - Méndez Martín, Bianchi
AU  - Piqueras de Noriega, Javier
AU  - Castaño, J. L.
PY  - 2001
DO  - 10.1016/S0921-5107(00)00711-X
SN  - 0921-5107
UR  - https://hdl.handle.net/20.500.14352/59057
T2  - Materials Science and Engineering B-Solid State Materials for Advanced Technology
AB  - In this work pure and Gd-doped GaSb ingots with different dopant concentrations were grown by the Bridgman Method. The compositional and electrical analysis carried out on these materials have shown the dependence of these results on the initial...
LA  - eng
M2  - 157
PB  - Elsevier Science SA
KW  - Gallium-Phosphide
KW  - Interface
KW  - Gaas
KW  - Er
TI  - Electrical and compositional properties on Bridgman-grown Gd-doped GaSb substrates
TY  - journal article
VL  - 81
ER  -