RT Journal Article
T1 Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junction
A1 Rivera Calzada, Alberto Carlos
A1 Gallego Toledo, Fernando
A1 Kalcheim, Yoav
A1 Salev, Pavel
A1 Valle, Javier del
A1 Tenreiro Villar, Isabel
A1 León Yebra, Carlos
A1 Santamaría Sánchez-Barriga, Jacobo
A1 Schuller, Ivan K.
AB One of the most desirable attributes of non-volatile memories and memristors is a fast and non-destructive read out of their resistive state. Prototypical ferroelectric (FE) memories use the bulk photovoltaic response associated to the polarization of FE films to address this requirement by optically sensing binary memory cells. A more advanced type of non-volatile memories is FE tunnel junctions (FTJs). They feature resistive state ratios R_High/R_Low up to 10^6, with a continuum of resistive states accessible, making them promising candidates for neuromorphic computing applications. A novel approach is presented to achieve the optical sensing of the resistive state in a La_(0.7)Sr_(0.3)MnO_3/BaTiO_3/ITO FTJ, by using the Schottky barrier forming in the La_(0.7)Sr_(0.3)MnO_3/BaTiO_3/ITO interface to dramatically enhance the optical response of the 5 nm BaTiO3 (BTO) barrier. Illumination with UV light exceeding the BTO bandgap through the top transparent ITO electrode generates a photovoltaic response in the R_High state, with an open circuit voltage V_oc of 400 mV at 20 K, enabling the optical sensing of the resistive state. In the R_Low state, the Schottky barrier is removed and the photoresponse disappears.
PB Wiley
SN 2199-160X
YR 2021
FD 2021-05-13
LK https://hdl.handle.net/20.500.14352/8157
UL https://hdl.handle.net/20.500.14352/8157
LA eng
NO CRUE-CSIC (Acuerdos Transformativos 2021)©2021 WileyA.R.-C. thanks the economic support of the mobility research program Salvador de Madariaga from Spanish Ministry of Science. Sample fabrication was supported by Spanish AEI through grant MAT201787134-C02. This material was based upon the work supported by the Air Force Office of Scientific Research under award number FA9550-20-1-0242.
NO Ministerio de  Economía y Competitividad (MINECO)
DS Docta Complutense
RD 18 abr 2025