TY  - JOUR
AU  - Rivera Calzada, Alberto Carlos
AU  - Gallego Toledo, Fernando
AU  - Kalcheim, Yoav
AU  - Salev, Pavel
AU  - Valle, Javier del
AU  - Tenreiro Villar, Isabel
AU  - León Yebra, Carlos
AU  - Santamaría Sánchez-Barriga, Jacobo
AU  - Schuller, Ivan K.
PY  - 2021
DO  - 10.1002/aelm.202100069
SN  - 2199-160X
UR  - https://hdl.handle.net/20.500.14352/8157
T2  - Advanced electronic materials
AB  - One of the most desirable attributes of non-volatile memories and memristors is a fast and non-destructive read out of their resistive state. Prototypical ferroelectric (FE) memories use the bulk photovoltaic response associated to the polarization of...
LA  - eng
PB  - Wiley
KW  - Nonvolatile memory
KW  - Electroresistance
KW  - Films
KW  - Transition
KW  - Nanoscale
KW  - Ferroelectric tunnel junctions
KW  - Optical resistive sensing
KW  - Photovoltaic effect
KW  - Resistive switching
KW  - Schottky barrier
TI  - Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junction
TY  - journal article
ER  -