RT Journal Article
T1 Electron Doping by Charge Transfer at LaFeO_3 /Sm_2CuO_4 Epitaxial Interfaces
A1 Bruno, Flavio Yair
A1 Schmidt, Rainer
A1 Varela Del Arco, María
A1 Garcia Barriocanal, Javier
A1 Rivera Calzada, Alberto Carlos
A1 Cuéllar Jiménez, Fabian Andrés
A1 León Yebra, Carlos
A1 Thakur, Pardeep
A1 Cezar, Julio
A1 Brookes, Nicholas
A1 García Hernández, Mar
A1 Dagotto, Elbio
A1 Pennycook, Stephen
A1 Santamaría Sánchez-Barriga, Jacobo
AB Using X-ray absorption spectroscopy and electron energy loss spectroscopy with atomic-scale spatial resolution, experimental evidence for charge transfer at the interface between the Mott insulators Sm2CuO4 and LaFeO3 is obtained. As a consequence of the charge transfer, the Sm2CuO4 is doped with electrons and thus epitaxial Sm2CuO4/LaFeO3 heterostructures become metallic.
PB Wiley
SN 0935-9648
YR 2013
FD 2013
LK https://hdl.handle.net/20.500.14352/91638
UL https://hdl.handle.net/20.500.14352/91638
LA eng
NO Bruno, F.Y., Schmidt, R., Varela, M., Garcia‐Barriocanal, J., Rivera‐Calzada, A., Cuellar, F.A., Leon, C., Thakur, P., Cezar, J.C., Brookes, N.B., Garcia‐Hernandez, M., Dagotto, E., Pennycook, S.J., Santamaria, J.: Electron Doping by Charge Transfer at LaFeO 3 /Sm 2 CuO 4 Epitaxial Interfaces. Advanced Materials. 25, 1468-1473 (2013). https://doi.org/10.1002/adma.201203483
NO Ministerio de Ciencia, Innovación y Universidades (España)
NO Comunidad de Madrid
NO European Commission
DS Docta Complutense
RD 19 mar 2026