TY  - CHAP
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - San Andrés Serrano, Enrique
PY  - 2005
DO  - 10.1109/SCED.2005.1504303
SN  - 0-7803-8810-0
UR  - https://hdl.handle.net/20.500.14352/53369
AB  - A comparison between interface quality of several temperatures thermal annealed HPRS TiO2 films and 750 degrees C annealed ALD TiO2 films has been established. Our attention has been focused on the interfacial state and disordered induced gap state...
LA  - eng
M2  - 49
PB  - IEEE
KW  - V Characteristics
KW  - TiO2
KW  - Dioxide
KW  - Growth.
TI  - Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
TY  - book part
ER  -