RT Book, Section
T1 Study of GaSb junction devices by cathodoluminescence and scanning tunneling spectroscopy
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Dutta, P: S.
AB GaSb p-n junctions formed by Zn diffusion in Te-doped n-GaSb single crystalline wafers have been characterized by cathodoluminescence (CL) microscopy and by scanning tunneling spectroscopy. CL plane-view observations of the Zn diffused side enable to study the homogeneity of the diffusion treatment. Spectra recorded by current imaging tunneling spectroscopy (CITS) in the n and p sides of the junction, clearly show the respective conductive behaviour and provide information on the local surface band gaps. Results are related to the diffusion profile measured by secondary ion mass spectrometry (SIMS).
PB Materials Research Society
SN 1-55899-496-3
YR 2000
FD 2000
LK https://hdl.handle.net/20.500.14352/60813
UL https://hdl.handle.net/20.500.14352/60813
NO ©Materials Research Society.Symposium on Optical Microstructural Characterization of Semiconductors held at the 1999 MRS Fall Meeting (1999. Boston)
DS Docta Complutense
RD 25 abr 2025