TY  - CHAP
AU  - Hidalgo Alcalde, Pedro
AU  - Méndez Martín, María Bianchi
AU  - Piqueras De Noriega, Francisco Javier
AU  - Dutta, P: S.
PY  - 2000
SN  - 1-55899-496-3
UR  - https://hdl.handle.net/20.500.14352/60813
AB  - GaSb p-n junctions formed by Zn diffusion in Te-doped n-GaSb single crystalline wafers have been characterized by cathodoluminescence (CL) microscopy and by scanning tunneling spectroscopy. CL plane-view observations of the Zn diffused side enable to...
M2  - 239
PB  - Materials Research Society
KW  - Gallium Antimonide
KW  - Doped Gasb
TI  - Study of GaSb junction devices by cathodoluminescence and scanning tunneling spectroscopy
TY  - book part
ER  -