RT Journal Article
T1 Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Prado Millán, Álvaro Del
A1 San Andrés Serrano, Enrique
AB High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O-2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The formation of Si-O bonds after the sputtering of the HfO2 film in O-2 atmosphere was observed by infrared spectroscopy. Optical diagnosis of the plasma demonstrated a high density of O radicals in the system when working with O-2. The small radius and high reactivity of these O radicals are the source of the SiN oxidation. However, the structure of the SiN film is preserved during Ar sputtering.
PB Amer Inst Physics
SN 0003-6951
YR 2007
FD 2007-11-05
LK https://hdl.handle.net/20.500.14352/51104
UL https://hdl.handle.net/20.500.14352/51104
LA eng
NO © 2007 American Institute of Physics. This work was partially supported by the Spanish M.E.C. under TEC2004 1237/MIC and TEC2007/63318 contracts.
NO Spanish M.E.C.
DS Docta Complutense
RD 18 abr 2025