RT Journal Article
T1 Optoelectronic properties of electronacceptor molecules adsorbed on graphene/silicon carbide interfaces
A1 Mansouri, Masoud
A1 Díaz Blanco, Cristina
A1 Martín, Fernando
A2 Springer Nature, 
AB Silicon carbide has emerged as an optimal semiconducting support for graphene growth. In previous studies, the formation of an interfacial graphene-like buffer layer covalently bonded to silicon carbide has been observed, revealing electronic properties distinct from ideal graphene. Despite extensive experimental efforts dedicated to this interface, theoretical investigations have been confined to its ground state. Here, we use many-body perturbation theory to study the electronic and optical characteristics of this interface and demonstrate its potential for optoelectronics. By adsorbing graphene, we show that the quasiparticle band structure exhibits a reduced bandgap, associated with an optical onset in the visible energy window. Furthermore, we reveal that the absorption of two prototypical electron-accepting molecules on this substrate results in a significant renormalization of the adsorbate gap, giving rise to distinct low-lying optically excited states in the near-infrared region. These states are well-separated from the substrate’s absorption bands, ensuring wavelength selectivity for molecular optoelectronic applications.
YR 2024
FD 2024-07-04
LK https://hdl.handle.net/20.500.14352/105848
UL https://hdl.handle.net/20.500.14352/105848
LA eng
NO Mansouri, M., Díaz, C. & Martín, F. Optoelectronic properties of electron-acceptor molecules adsorbed on graphene/silicon carbide interfaces. Commun Mater 5, 117 (2024). https://doi.org/10.1038/s43246-024-00549-6
NO European ResearchCouncil
NO Ministerio de Ciencia e Innovación (España)
DS Docta Complutense
RD 1 sept 2024