TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 2007
DO  - 10.1088/0268-1242/22/12/019
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/51101
T2  - Semiconductor Science and Technology
AB  - Thin films of hafnium oxide have been deposited by the high-pressure reactive sputtering (HPRS) system. In this growth system the deposition pressure is around 1 mbar, three orders of magnitude higher than in the conventional ones, assuring that both...
LA  - eng
M2  - 1344
PB  - Iop Publishing Ltd
KW  - Semicondcutor Technology
KW  - Silicon-Nitride
KW  - Films
KW  - Metal
KW  - Quality
KW  - Interface
KW  - Temperature
KW  - Transistors
KW  - Transients
KW  - Growth.
TI  - Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics
TY  - journal article
VL  - 22
ER  -