RT Journal Article
T1 Monte Carlo simulation of microwave noise temperature in cooled GaAs and InP
A1 Miranda Pantoja, José Miguel
A1 Sebastián Franco, José Luis
AB A simulation at microscopic level of the intrinsic microwave noise temperature associated to GaAs and InP semiconductors under far from equilibrium conditions has been performed. The dependence of the noise temperature on the electric field, doping level, and physical temperature has been investigated, and the results show the existence of threshold fields above which electron heating and partition noise due to intervalley scattering can make the cooling inefficient in terms of noise improvements. A comparison with available experimental data has also been made to verify the accuracy of the models used in the simulation.
PB IEEE-Inst. Electrical Electronics Engineers Inc
SN 0018-9480
YR 2000
FD 2000-07
LK https://hdl.handle.net/20.500.14352/58955
UL https://hdl.handle.net/20.500.14352/58955
LA eng
NO © 2000 IEEE.
DS Docta Complutense
RD 15 abr 2025