TY  - JOUR
AU  - Cremades Rodríguez, Ana Isabel
AU  - Piqueras de Noriega, Javier
PY  - 2002
DO  - 10.1016/S0921-5107(01)01056-X
SN  - 0921-5107
UR  - https://hdl.handle.net/20.500.14352/58810
T2  - Materials Science and Engineering B-Solid State Materials for Advanced Technology
AB  - A series of 100 nm thick InGaN films with Indium content up to 14% has been grown by MOVPE on SiC substrates. Cathodoluminescence (CL) and remote electron beam induced current (REBIC) in the scanning electron microscope have been applied to...
LA  - eng
M2  - 341
PB  - Elsevier Science Sa
KW  - Gan Epitaxial Layers
KW  - Diffusion Length
KW  - Quantum-Wells
KW  - Threading Dislocations
KW  - Spatial-Distribution
KW  - Electron-Beam
KW  - Cathodoluminescence
KW  - Luminescence
TI  - Study of carrier recombination at structural defects in InGaN films
TY  - journal article
VL  - 91
ER  -