RT Book, Section
T1 STM-REBIC study of nanocrystalline and crystalline silicon
A1 Nogales Díaz, Emilio
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Plugaru, R.
AB Electrically active regions of nanocrystalline silicon (nc-Si) films as well as of a p-type crystalline silicon (c-Si) wafer have been investigated by using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrument. The nc-Si films were obtained by boron implantation of amorphous silicon layers with an average nanocrystal size of about 10 nm. STM current constant images reveal a cell structure in the nc-Si films which was also revealed in the STM remote electron beam induced current (REBIC) images with a resolution of up to 20 nm. The contrast in the STM-REBIC images indicate the existence of space charge regions at the boundaries. The influence of the thermal treatment on the cell structure was studied. For comparison, SEM-REBIC and STM-REBIC images from c-Si wafer were obtained.
PB Materials Research Society
SN 1-55899-675-3
SN 0272-9172
YR 2003
FD 2003
LK https://hdl.handle.net/20.500.14352/60809
UL https://hdl.handle.net/20.500.14352/60809
NO © Materials Research SocietySymposium on Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures  (2002. Boston)
DS Docta Complutense
RD 25 abr 2025