RT Journal Article
T1 Electron-electron interaction and weak localization effects in badly metallic SrRuO_(3)
A1 López de la Torre, M. A.
A1 Sefrioui, Zouhair
A1 Arias Serna, Diego
A1 Varela Del Arco, María
A1 Villegas, J. E.
A1 Ballesteros, C.
A1 León Yebra, Carlos
AB We report on the effect of light ion irradiation on the low-temperature electrical resistivity of ferromagnetic SrRuO_(3) thin films. Fresh samples displayed a ferromagnetic transition at T_(c)̴ 160 K, good metallic behavior (ρ(300 K)~400μΩcm, dρ/dT>0) at room temperature, and the low-temperature upturn in the electrical resistivity commonly found in SrRuO_(3). Badly metallic films, displaying high values of the electrical resistivity (O(1000μΩcm)) and incipient nonmetallic behavior (dρ/dT<0) at low temperature, were obtained by He+ irradiation. For high enough irradiation doses, these samples did not show magnetic order down to the base temperature of our experiments. The temperature dependence of the electrical conductivity of virgin and irradiated samples is discussed in terms of a weak localization contribution plus a large electron-electron interaction term. The magnitude of the e^(-)-e^(-) contribution reflects the enhancement of strong electron correlations in SrRuO_(3) due to disorder.
PB American Physical Society
SN 0163-1829
YR 2001
FD 2001-01-05
LK https://hdl.handle.net/20.500.14352/59640
UL https://hdl.handle.net/20.500.14352/59640
LA eng
NO © 2001 The American Physical Society. This work was supported by Comisión Asesora de la Investigación Científica y Técnica through Projects Nos. MAT94-0604C0102 and Acción Especial MAT 17/95. Z.S. acknowledges financial support from Agencia Española de Cooperación Internacional (AECI).
NO Comisión Asesora de la Investigación Científica y Técnica
NO Acción Especial
NO Agencia Española de Cooperación Internacional (AECI)
DS Docta Complutense
RD 27 abr 2025