RT Journal Article
T1 Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering
A1 Pampillón. María Ángela, 
A1 Feijoo, Pedro Carlos
A1 San Andrés Serrano, Enrique
A1 Lucía Mulas, María Luisa
A1 Prado Millán, Álvaro Del
A1 Toledano-Luque, María
AB Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 °C. At an oxidation temperature of 500 °C the films show a transition from monoclinic structure to a mixture of monoclinic and cubic. Regrowth of interfacial SiOx is observed as temperature is increased, up to 1.6 nm for 750 °C. This temperature yields the lowest interface trap density, 4 × 1010 eV−1 cm−2, but the effective permittivity of the resulting dielectric is only 7.4. The reason of this low value is found on the oxidation mechanism, which yields a surface with located bumps. These bumps increase the average thickness, thus reducing the capacitance and therefore the calculated permittivity.
PB Elsevier
SN 0167-9317
YR 2011
FD 2011-04-24
LK https://hdl.handle.net/20.500.14352/99145
UL https://hdl.handle.net/20.500.14352/99145
LA eng
NO Pampillón, M. A., et al. «Anomalous Thermal Oxidation of Gadolinium Thin Films Deposited on Silicon by High Pressure Sputtering». Microelectronic Engineering, vol. 88, n.o 9, septiembre de 2011, pp. 2991-96. DOI.org (Crossref), https://doi.org/10.1016/j.mee.2011.04.058.
NO Ministerio de Ciencia e Innovación (España)
DS Docta Complutense
RD 9 abr 2025