TY  - JOUR
AU  - Pampillón. María Ángela
AU  - Feijoo, Pedro Carlos
AU  - San Andrés Serrano, Enrique
AU  - Lucía Mulas, María Luisa
AU  - Prado Millán, Álvaro Del
AU  - Toledano-Luque, María
PY  - 2011
DO  - 10.1016/j.mee.2011.04.058
SN  - 0167-9317
UR  - https://hdl.handle.net/20.500.14352/99145
T2  - Microelectronic Engineering
AB  - Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 °C. At an oxidation temperature of 500 °C the films show a...
LA  - eng
M2  - 2991
PB  - Elsevier
KW  - Microelectronics
KW  - MOS
KW  - High-k
TI  - Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering
TY  - journal article
VL  - 88
ER  -