RT Journal Article
T1 Cathodoluminescence of In doped ZnS nanostructures grown by vapor-solid method
A1 Piqueras de Noriega, Javier
A1 Sotillo Buzarra, Belén
A1 Fernández Sánchez, Paloma
AB Vapor–solid (VS) growth method at temperatures in the range from 1000 °C to 1200 °C has been used to obtain In doped ZnS micro- and nanostructures. The morphologies of the synthesized structures depend strongly on the deposition temperature, consisting on nano- and microswords, nanoribbons and nanoplates, with a major presence of nanoplates and strongly hierarchical structures at the higher In contents. The degree of impurity incorporation and the influence of the dopant on the luminescence properties have been studied. While in pure ZnS the main deep level bands are peaked in the blue-green region, In doped samples show an orange-red emission.
PB Elsevier Science SA
SN 0925-8388
YR 2013
FD 2013-06-25
LK https://hdl.handle.net/20.500.14352/33385
UL https://hdl.handle.net/20.500.14352/33385
LA eng
NO [1] X. Fang, T. Zhai, U.K. Gautam, L. Li, L. Wu, Y. Bando, D. Golberg, Prog. in Mater. Sci. 56 (2011) 175–287.[2] Y. Wang, L. Zhang, C. Liang, G. Wang, X. Peng, Chem. Phys. Lett. 357 (2002) 314–318.[3] X. Fang, Y. Bando, C. Ye, G. Shen, D. Golberg, J. Phys. Chem. C 111 (2007) 8469–8474.[4] X.J. Xu, G.-T. Fei, W.-H. Yu, X.W. Wang, L. Chen, L.-D. Zhang, Nanotechnology 17 (2006) 426–429.[5] Z.G. Chen, J. Zou, G. Liu, H.F. Lu, F. Li, G.Q. Lu, H.M. Cheng, Nanotechnology 19 (2008) 055710.[6] D. Moore, Z.L. Wang, J. Mater. Chem. 16 (2006) 3898–3905.[7] J. Hu, G. Wang, C. Guo, D. Li, L. Zhang, J. Zhao, J. Lumin. 122–123 (2007) 172–175.[8] T. Zhai, Z. Gu, Y. Ma, W. Yang, L. Zhao, J. Yao, Mater. Chem. Phys. 100 (2006) 281–284.[9] M.V. Limaye, S. Gokhale, S.A. Acharya, S.K. Kulkarni, Nanotechnology 19 (2008) 415602.[10] B. Sotillo, P. Fernández, J. Piqueras, J. Cryst. Growth 348 (2012) 85–90.[11] J. Cao, J. Yang, Y. Zhang, L. Yang, D. Wang, M. Wei, Y. Wang, Y. Liu, M. Gao, X. Liu, J. Phys. D: Appl. Phys. 43 (2010) 075403.[12] S. Lee, D. Song, D. Kim, J. Lee, S. Kim, I.Y. Park, Y.D. Choi, Mater. Lett. 58 (2004) 342–346.[13] M.-Y. Lu, M.-P. Lu, Y.-A. Cung, M.-J. Chen, Z.L. Wang, L.-J. Chen, J. Phys. Chem. C 113 (2009) 12878–12882.[14] P. Prathap, N. Revathi, Y.P.V. Subbaiah, K.T. Ramakrishna Reddy, R.W. Miles, Solid State Sci. 11 (2009) 224–232.[15] K. Lott, M. Raukas, O. Volobujeva, A. Vishnjakov, A. Grebennik, Int. J. Inorg. Mater. 3 (2001) 1345–1347.[16] H. Koelmans, J. Phys. Chem. Solids 17 (1960) 69–79.[17] T. Guo, Y. Chen, L. Liu, Y. Cheng, X. Zhang, B. Ma, M. Wei, Cryst. Res. Technol. 47 (2012) 449–454.[18] J.F. Scott, T.C. Damen, W.T. Silfvast, R.C.C. Leite, L.E. Cheesman, Opt. Commun. 1 (1970) 397–399.[19] Y. Hao, G. Meng, Z.-L. Wang, C. Ye, L. Zhang, Nano Lett. 6 (2006) 1650–1655.[20] A. Urbieta, P. Fernández, J. Piqueras, J. Nano Res. 4 (2008) 27–32.[21] Y. Ortega, P. Fernández, J. Piqueras, J. Appl. Phys. 105 (2009) 054315.[22] Y. Ortega, P. Fernández, J. Piqueras, J. Crys. Growth 311 (2009) 3231–3234.[23] B. Alemán, P. Hidalgo, P. Fernández, J. Piqueras, J. Phys. D: Appl. Phys. 42 (2009) 225101.[24] Y. Ortega, P. Fernández, J. Piqueras, J. Nanosci. Nanotechnol. 10 (2010) 502–507.[25] B. Alemán, P. Fernández, J. Piqueras, J. Crys. Growth 312 (2010) 3117–3121.[26] J.W. Allen, Semicond. Sci. Technol. 10 (1995) 1049–1064.[27] Q. Li, C. Wang, Appl. Phys. Lett. 83 (2003) 359–361.[28] S. Lee, D. Song, D.Kim. J. Lee, S. Kim, I.Y. Park, Y.D. Choi, Mater. Lett. 58 (2004) 342–346.[29] T. Mitsui, N. Yamamoto, T. Tadokoro, S. Ohta, J. Appl. Phys. 80 (1996) 6972–6979.[30] H. Chen, Y. Hu, X. Zeng, J. Mater. Sci. 46 (2011) 2715–2719.[31] C. Ye, X. Fang, G. Li, L. Zhang, Appl. Phys. Lett. 85 (2004) 3035–3037.[32] A. Urbieta, P. Fernández, J. Piqueras, V. Muñoz, Mater. Sci. Eng. B78 (2000) 105–108.[33] A. Urbieta, P. Fernández, J. Piqueras, Ch. Hardalov, T. Sekiguchi, J. Phys. D: Appl. Phys. 34 (2001) 2945–2949.[34] C.C. Klick, J.H. Schulman, Solid State Phys. 5 (1957) 97–172.
NO ©2013 Elsevier B.V. All rights reserved.This work was supported by MICINN (Projects MAT2009-07882 and CSD2009-0013) and by MINECO (MAT2012-31959). B. Sotillo acknowledges Ministerio de Educación (Subprograma FPU) of Spain for financial support.
NO MICINN (Ministerio de Ciencia e Innovación, España)
NO MINECO (Ministerio de Economía y Competitividad, España)
NO Ministerio de Educación (Subprograma FPU) of Spain
DS Docta Complutense
RD 16 may 2024