%0 Journal Article
%A Domínguez-Adame Acosta, Francisco
%A Piqueras De Noriega, Francisco Javier
%T Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence
%D 1991
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/59291
%X Grain boundaries in GaP and InP have been studied by infrared cathodoluminescence (CL). In GaP the results indicate that there exists a depletion region beside grain boundaries where the concentration of P(Ga) antisite defects is lower than in the bulk material. In InP the near-edge CL emission and a deep level luminescence at 1.07 eV have been found to cause similar grain boundary CL contrast.
%~