RT Journal Article
T1 Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence
A1 Domínguez-Adame Acosta, Francisco
A1 Piqueras de Noriega, Javier
AB Grain boundaries in GaP and InP have been studied by infrared cathodoluminescence (CL). In GaP the results indicate that there exists a depletion region beside grain boundaries where the concentration of P(Ga) antisite defects is lower than in the bulk material. In InP the near-edge CL emission and a deep level luminescence at 1.07 eV have been found to cause similar grain boundary CL contrast.
PB American Institute of Physics
SN 0021-8979
YR 1991
FD 1991-01-01
LK https://hdl.handle.net/20.500.14352/59291
UL https://hdl.handle.net/20.500.14352/59291
LA eng
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NO © 1991 American Institute of Physics.This work was partially supported by the Comisión Interministerial de Ciencia y Tecnología (Project PB86-0151) and by DGICYT-DAAD.
NO Comisión Interministerial de Ciencia y Tecnologia
NO DGICYT-DAAD
DS Docta Complutense
RD 4 may 2024