RT Journal Article
T1 Electrical conductivity relaxation in thin-film yttria-stabilized zirconia
A1 Rivera Calzada, Alberto Carlos
A1 Santamaría Sánchez-Barriga, Jacobo
A1 León Yebra, Carlos
AB We report on complex admittance measurements on ZrO_(2):Y_(2)O_(3) (YSZ) thin films in the parallel plate geometry. Highly textured YSZ thin films, grown by rf sputtering, allow measuring complex admittance free of the effect of charge blocking at grain boundaries. We have examined low-temperature (close to room temperature) regime dominated by association of oxygen vacancies. Complex admittance analyzed in terms of the modulus formalism supplies information on correlation effects in ion motion and allows obtaining an association energy for the oxygen vacancies of 0.45 eV, in agreement with previous theoretical calculations.
PB American Institute of Physics
SN 0003-6951
YR 2001
FD 2001-01-29
LK https://hdl.handle.net/20.500.14352/59643
UL https://hdl.handle.net/20.500.14352/59643
LA eng
NO 1) Proceedings of the Tenth International Conference on Solid State Ionics, Special Volume of Solid State Ionics, edited by B. V. R. Chowdari (North-Holland, Amsterdam, 1996).2) Proceedings of the Fifth International Symposium on Solid Oxide Fuel Cells (Electrochemical Society Pennington, NJ, 1997).3) K. Suzuki, M. Kubo, Y. Oumi, R. Miura, H. Takaba, A. Fahmi, A. Chatterjee, K. Teraishi, A. Miyamoto, Appl. Phys. Lett., 73, 1502 (1998).4) See the review by T. H. Etsell and S. N. Flengas, Chem. Rev., 70, 339 (1970).5) J. M. Dixon, L. D. La Grange, U. Merten, C. F. Miller, J. T. Porter, J. Electrochem. Soc., 110, 276 (1963).6) D. W. Stickler, W. G. Carlson, J. Am. Ceram. Soc., 47, 122 (1964).7) J. D. Solier, I. Cachadiña, A. Domínguez-Rodríguez, Phys. Rev. B, 48, 3704 (1993).8) J. P. Goff, W. Hayes, S. Hull, M. T. Hutchings, K. N. Clausen, Phys. Rev. B, 59, 14202 (1999).9) A. K. Jonscher, in Dielectric Relaxation in Solids (Chelsea Dielectric, London, 1983).10) K. Funke, Prog. Solid State Chem., 22, 111 (1993).11) W. K. Lee, J. F. Liu, A. S. Nowick, Phys. Rev. Lett., 67, 1559 (1991).12) K. L. Ngai, J. Chem. Phys., 110, 10576 (1999).13) K. L. Ngai, C. T. Moynihan, Bull. Mater. Res. Soc., 23, 51 (1998).14) K. L. Ngai, C. León, Phys. Rev. B, 60, 9396 (1999).15) K. L. Ngai, R. W. Rendell, H. Jain, Phys. Rev. B, 30, 2133 (1984).16) C. León, M. L. Lucía, J. Santamaría, M. A. Paris, J. Sanz, A. Várez, Phys. Rev. B, 54, 184 (1996).17) C. León, J. Santamaría, M. A. Paris, J. Sanz, J. Ibarra, L. M. Torres, Phys. Rev. B, 56, 5302 (1997).18) A. Pimenov, J. Ullrich, P. Lunkenheimer, A. Loidl, C. H. Rüscher, Solid State Ionics, 109, 111 (1998).19) C. León, M. L. Lucía, and J. Santamaría, Phys. Rev. B, 55, 882 (1997).20) K. L. Ngai, Comments Solid State Phys., 9, 121 (1979) --- ibid., 9, 141 (1980) --- K. L. Ngai, K. Y. Tsang, Phys. Rev. E, 60, 4511 (1999).21) J. E. Bauerle, J. Hrizo, J. Phys. Chem. Solids, 30, 565 (1969).
NO © 2001 American Institute of Physics.
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RD 4 may 2024