RT Journal Article
T1 Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
A1 Feijoo, Pedro Carlos
A1 Kauerauf, Thomas
A1 Toledano-Luque, María
A1 Togo, Misuhiro
A1 San Andrés Serrano, Enrique
A1 Groeseneken, Guido.
AB In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-kappa and TiN metal electrode. For the 0.8-nm EOT FinFETs, it is found that TDDB lifetime is consistent with results of planar devices for areas around 10(-8) cm(2), implying that the FinFET architecture does not seem to introduce new failure mechanisms. However, for devices with smaller area, the extrapolated voltage at a ten-year lifetime for soft breakdown (SBD) does not meet the specifications, and as a consequence, the SBD path wear-out will have to be included in the final extrapolation. Furthermore, it is shown that for EOTs smaller than 0.8 nm, the TDDB reliability on n-type FinFETs is challenged by the high leakage currents.
PB Institute of Electrical and Electronics Engineers
SN 1530-4388
YR 2012
FD 2012-01-06
LK https://hdl.handle.net/20.500.14352/98211
UL https://hdl.handle.net/20.500.14352/98211
LA eng
NO P. C. Feijoo, T. Kauerauf, M. Toledano-Luque, M. Togo, E. San Andres and G. Groeseneken, "Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs," in IEEE Transactions on Device and Materials Reliability, vol. 12, no. 1, pp. 166-170, March 2012, doi: 10.1109/TDMR.2011.2180387
NO Ministerio de Ciencia e Innovación (España)
DS Docta Complutense
RD 9 abr 2025