%0 Journal Article
%A Méndez Martín, Bianchi
%A Piqueras de Noriega, Javier
%T Scanning electron acoustic microscopy of indium-doped semi-insulating GaAs
%D 1993
%@ 0268-1242
%U https://hdl.handle.net/20.500.14352/58990
%X Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoration contribute to the SEAM contrast.
%~