RT Journal Article
T1 Scanning electron acoustic microscopy of indium-doped semi-insulating GaAs
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
AB Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoration contribute to the SEAM contrast.
PB IOP Publishing LTD
SN 0268-1242
YR 1993
FD 1993-03
LK https://hdl.handle.net/20.500.14352/58990
UL https://hdl.handle.net/20.500.14352/58990
LA eng
NO © 1993 IOP Publishing Ldt.This work was supported by the Volkswgen Foundation and by DGICYT (Project PB 92-1017).
NO DGICYT
NO Volkswgen Foundation
DS Docta Complutense
RD 15 abr 2025