TY  - JOUR
AU  - Méndez Martín, Bianchi
AU  - Piqueras de Noriega, Javier
PY  - 1993
DO  - 10.1088/0268-1242/8/3/002
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/58990
T2  - Semiconductor Science and Technology
AB  - Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating...
LA  - eng
M2  - 320
PB  - IOP Publishing LTD
KW  - Dislocations
KW  - Behavior
TI  - Scanning electron acoustic microscopy of indium-doped semi-insulating GaAs
TY  - journal article
VL  - 8
ER  -