%0 Journal Article
%A Plaza, J. L:
%A Hidalgo Alcalde, Pedro
%A Méndez Martín, María Bianchi
%A Piqueras De Noriega, Francisco Javier
%A Dieguez, E.
%T Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique
%D 2002
%@ 0022-0248
%U https://hdl.handle.net/20.500.14352/58929
%X Nd-doped GaSb bulk crystals with three different dopant concentrations have been grown by the vertical Bridgman technique. The axial segregation has been characterised by obtaining the effective segregation coefficient. Differences in the value of this coefficient show its dopant concentration dependence. Resistivity, carrier density and mobility have also been obtained showing the p-type nature of this material. Structural and compositional properties have been studied revealing some inclusions with high Nd concentration in the highest Nd-doped ingot.
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