RT Journal Article
T1 Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique
A1 Plaza, J. L:
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, Bianchi
A1 Piqueras de Noriega, Javier
A1 Dieguez, E.
AB Nd-doped GaSb bulk crystals with three different dopant concentrations have been grown by the vertical Bridgman technique. The axial segregation has been characterised by obtaining the effective segregation coefficient. Differences in the value of this coefficient show its dopant concentration dependence. Resistivity, carrier density and mobility have also been obtained showing the p-type nature of this material. Structural and compositional properties have been studied revealing some inclusions with high Nd concentration in the highest Nd-doped ingot.
PB Elsevier Science B.V.
SN 0022-0248
YR 2002
FD 2002-06
LK https://hdl.handle.net/20.500.14352/58929
UL https://hdl.handle.net/20.500.14352/58929
LA eng
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NO © 2002 Published by Elsevier Science B.V.This work has been supported by CICYT under theproje ct ESP-98 1340 and by INTAS-ESA Project number 99 01814.
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NO INTAS-ESA
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