RT Journal Article
T1 Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires
A1 Marcano, N.
A1 Sangiao, S.
A1 Plaza, M.
A1 Pérez García, Lucas
A1 Fernández Pacheco, A.
A1 Córdoba, R.
A1 Sánchez, M. C.
A1 Morellón, L.
A1 Ibarra, M. R.
A1 De Teresa, J. M.
AB We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.
PB American Institute of Physics
SN 0003-6951
YR 2010
FD 2010-02-22
LK https://hdl.handle.net/20.500.14352/42776
UL https://hdl.handle.net/20.500.14352/42776
LA eng
NO © American Institute of Physics.This work was supported by Spanish Ministry of Science (through Project Nos. MAT2007-65965-C02-02 and MAT2008-06567-C02) including FEDER funding and the Aragon Regional Government. N. Marcano and S. Sangiao acknowledge financial support from Spanish CSIC (JAE-doc program) and Spanish MEC (FPU program).
NO Ministerio de Ciencia e Innovación (MICINN)
NO FEDER
NO Aragon Regional Government
NO CSIC
DS Docta Complutense
RD 8 may 2024